Poly-crystalline silicon, also called poly-silicon or poly-Si, is a high purity, poly-crystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Poly-silicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process. This process involves distillation of volatile silicon compounds, and their decomposition into silicon at high temperatures. An emerging, alternative process of refinement uses a fluidized bed reactor. 

The photovoltaic industry also produces upgraded metallurgical-grade silicon (UMG-Si), using metallurgical instead of chemical purification processes. When produced for the electronics industry, poly-silicon contains impurity levels of less than one part per billion (ppb), while poly-crystalline solar grade silicon (SoG-Si) is generally less pure.

The poly-silicon feed-stock – large rods, usually broken into chunks of specific sizes and packaged in clean rooms before shipment – is directly cast into multi-crystalline ingots or submitted to a recrystallization process to grow single crystal boules. The products are then sliced into thin silicon wafers and used for the production of solar cells, integrated circuits and other semiconductor devices.

Silicon sputtering target, as a very important functional materials, it mainly used for depositing SiO2, Si3N4 and other dielectric layer by magnetic sputtering process. Those thin films are characterized by excellent hardness, optic, dielectric properties, wear and corrosion resistance, which is widely applied to the field of LCD transparent conducting glass, LOW-E building glass and micro-electronics.

Type: poly-crystalline or mono-crystalline

Purity: 5N, 6N

Available shape: Planar, Rotary

Growth method: Czochralski (CZ)

Density:2.33g/cm3

Conductivity type: P type (Boron doped) & N type (phosphorus doped)

Dimension:

length:300mm max

width:150mm max

diameter:450mm max

thickness:3-12mm

tolerance:±0.1mm

Specific resistance:0.005-0.02 ohm.cm

1-10 ohm.cm

10 ohm.cm min

Planeness (TIR): < 1.2μm

Partial planeness (STIR): <0.3μm

Warp: <30μm