Products

Aluminum Zinc Oxide (AZO) Sputtering Target

Attributes Name

Ceramic Sputtering Target
Product Name

Aluminum Zinc Oxide sputtering target
Element Symbol

AZO
Purity

3N5,4N
Shape

Planar

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Description

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Xinkang specializes in producing high purity Aluminum Zinc Oxide (AZO) Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications.

Our standard sputtering targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations. Furthermore, threading, beveling, grooves, and backing are designed to work with both older sputtering devices and the latest process equipment. Some application examples are large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best-demonstrated techniques, including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra-high purity sputtering metallic or oxide material onto another solid substrate. This process is done by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment.

AZO Sputtering Targets Information

Purity: 99.99%;

Production Method: hot press sintering

Available dimensions:

Circular: Diameter = 3 mm;

Rectangular: Length = 3 mm.

Type of Bond: Indium, Elastomer.

Deposition Procedure of AZO Sputtering Targets

AZO films can be deposited by RF or DC magnetron sputtering, but not by thermal evaporation. It depends on the process. If the sputter target is non-conducting, as with a ceramic composition, RF sputter techniques are necessary. Otherwise, reactive DC magnetron sputtering is preferred.

Target power density ~3-4 W/cm2 with an O2 to Ar flow rate ~2:1.

Operating total pressure ~6 mTorr.

Substrate temperature near 200° C.

Higher power and greater thicknesses produce lower sheet resistances.